A single-bit-line cross-point cell activation (SCPA) architecturefor ultra-low-power SRAM's |
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Authors: | Ukita M Murakami S Yamagata T Kuriyama H Nishimura Y Anami K |
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Affiliation: | ULSI Lab., Mitsubishi Electr. Corp., Hyogo; |
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Abstract: | This paper describes a single-bit-line cross-point cell activation (SCPA) architecture, which has been developed to reduce active power consumption and to avoid increase in the size of high-density SRAM chips, such as 16-Mb SRAM's and beyond. A new PMOS precharging boost circuit, introduced to realize the single-bit-line structure, is also discussed. This circuit is suitable for operation under low-voltage power supply conditions. The SCPA architecture with the new word-line boost circuit is demonstrated with the experimental device, which is fabricated by a 0.4-μm CMOS wafer process technology |
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