| 电流型碳化硅探测器 |
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| 引用本文： | 欧阳晓平,刘林月.电流型碳化硅探测器[J].原子能科学技术,2019,53(10):1999-2011. |
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| 作者姓名： | 欧阳晓平 刘林月 |
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| 作者单位： | 西北核技术研究院 强脉冲辐射环境模拟与效应国家重点实验室，陕西 西安710024 |
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| 摘 要： | 本文从电流型半导体探测器的起源、传统电流型探测器在应用中的问题出发，论述了国内外在新型半导体探测器研制和电流型半导体探测器的研究现状。对半导体探测器结构和物理特性进行了研究，并重点介绍了电流型碳化硅（SiC）探测器的设计制作、响应性能研究、抗辐照性能研究等内容，为电流型半导体探测器的研究和应用提供参考。
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| 关 键 词： | 半导体探测器 电流型 硅探测器 SiC探测器 |
Current Mode Silicon Carbide Detector |
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| OUYANG Xiaoping,LIU Linyue.Current Mode Silicon Carbide Detector[J].Atomic Energy Science and Technology,2019,53(10):1999-2011. |
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| Authors: | OUYANG Xiaoping LIU Linyue |
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| Affiliation: | State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China |
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| Abstract: | In this paper, starting from the origin of current mode semiconductor detector and the problems in the application of traditional current mode detector, the research status of new semiconductor detector and current mode semiconductor detector at home and abroad was discussed. The structure and physical properties of semiconductor detectors were studied. The current mode silicon carbide detector was introduced, including detector design, detector performance, and radiation resistance, which can offer reference to the research and application of current mode semiconductor detector. |
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| Keywords: | semiconductor detector current mode Si detector silicon carbide detector |
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