| 压接型IGBT均流设计 |
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| 引用本文： | 刘国友,窦泽春,罗海辉,覃荣震,王彦刚.压接型IGBT均流设计[J].中国电力,2019,52(9):20-29. |
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| 作者姓名： | 刘国友 窦泽春 罗海辉 覃荣震 王彦刚 |
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| 作者单位： | 1. 新型功率半导体器件国家重点实验室, 湖南 株洲 412001;2. 株洲中车时代电气股份有限公司, 湖南 株洲 412001;3. 中车株洲电力机车研究所有限公司, 湖南 株洲 412001 |
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| 摘 要： | 针对压接型绝缘栅双极晶体管（IGBT）内部均流设计，对多芯片压接结构及其压力均衡、压接型IGBT芯片内部均流、子单元间均流等方面进行了研究和优化设计。试验验证了压接型IGBT具有良好的电流关断能力、短路电流能力及反偏安全工作区，器件内部均流状态较好。
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| 关 键 词： | 均流 压接型 IGBT 设计 |
| 收稿时间： | 2019-07-15 |
| 修稿时间： | 2019-07-22 |
Current-sharing Design of Press-Pack IGBT |
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| LIU Guoyou,DOU Zechun,LUO Haihui,QIN Rongzhen,WANG Yangang.Current-sharing Design of Press-Pack IGBT[J].Electric Power,2019,52(9):20-29. |
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| Authors: | LIU Guoyou DOU Zechun LUO Haihui QIN Rongzhen WANG Yangang |
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| Affiliation: | 1. State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou 412001, China;2. Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou 412001, China;3. CRRC Zhuzhou Institute Co., Ltd., Zhuzhou 412001, China |
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| Abstract: | Aiming at the inner design of the press-pack IGBT devices, this paper focuses on the study and optimal design of these issues, such as multi-chip pressure contact and its pressure balancing, internal current-sharing and current balancing among sub-units. Testing results showed that the developed press-pack IGBT devices has promising capabilities of current turn-off, short-circuit current and RBSOA, which indicates their good ability of inner current sharing. |
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| Keywords: | current-sharing press-pack IGBT design |
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