GaN中质子辐照损伤的分子动力学模拟研究

本文利用分子动力学方法研究了GaN在质子辐照下的损伤。对不同能量（1~10 keV）初级离位原子（PKA）引起的级联碰撞进行了研究，分析了点缺陷与PKA能量的关系、点缺陷随时间的演化规律、点缺陷的空间分布及点缺陷团簇的尺寸特征。研究结果表明，点缺陷的产生与PKA能量呈线性关系，不同类型的点缺陷随时间演化规律相似，点缺陷多产生在PKA径迹旁，点缺陷团簇多为孤立的点缺陷和小团簇。

Molecular Dynamics Simulation of Proton Irradiation Damage in GaN

The molecular dynamics method was used to study the damage of GaN irradiated by proton in this paper. By studying the cascade collision caused by primary knock-on atom (PKA) with different energy of 1-10 keV, the relationship between the point defect and the PKA energy, the evolution law of point defect with time, the spatial distribution of point defect and the point defect cluster size characteristic were analyzed. The result shows that the production of point defect is linear with the PKA energy, the evolutions of different types of point defects with time are similar, point defects are mostly produced along the PKA trajectory, and most of point defect clusters are isolated point defects and small clusters.