瞬态闭锁试验在0.13 μm大规模集成电路中引起的潜在损伤

瞬态剂量率辐射试验会引起集成电路发生损伤或失效，其原因至少有两种：闭锁大电流引起的电路内部金属互连熔融；累积电离总剂量引起的氧化层电荷造成阈值电压偏移。本文以一种0.13 μm体硅CMOS处理器为对象，研究了瞬态剂量率和稳态电离总剂量辐射效应规律。结果表明：瞬态剂量率闭锁效应对处理器造成了显著的潜在损伤，导致其总剂量失效阈值从1 030 Gy(Si)降低至600 Gy(Si)。研究结论对于大规模集成电路的可靠性评估和指导辐射加固设计有重要参考意义。

Latent Damage in 0.13 μm Large Scale Integrated Circuit from Transient Latchup Test

There are two reasons at least for integrated circuit (IC) failure or latent damage during transient dose rate radiation test. One is the thermal breakdown of metal interconnect caused by short time high current during latchup, and another is threshold-voltage shift due to oxide-trap charge induced by ionizing radiation. In this paper, the radiation effects of transient dose rate and steady ionization total dose were studied with 0.13 μm bulk silicon CMOS processor. The results show that the transient dose rate latchup effect induces significant latent damage in processor, which causes that the total dose failure threshold is reduced from 1 030 Gy(Si) to 600 Gy(Si). The result is important for device reliability estimate and radiation hardness design guideline.