Experimental verification of the nature of the high energy tail inthe electron energy distribution in n-channel MOSFETs |
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Authors: | Anil KG Mahapatra S Eisele I |
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Affiliation: | Inst. fur Phys., Univ. der Bundeswehr Munchen, Neubiberg; |
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Abstract: | Sensitive quantum-yield measurements (M) on n-channel MOSFETs for drain voltages (VD) near the bandgap voltage of silicon, showed an abnormal bell-shaped M versus gate voltage (VG) characteristic at 77 K. At higher VD, M decreases monotonously with increasing VG. Measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups and provide simultaneous experimental verification for the presence of a tail that depends strongly on lattice temperature and electron-electron interaction (EEI) broadening of the tail. Our data suggest EEI broadening of the tail even in the subthreshold regime |
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