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| 对辐射感应闭锁窗口现象的解释 | |
| 引用本文： | 许献国,杨怀民,胡建栋. 对辐射感应闭锁窗口现象的解释[J]. 太赫兹科学与电子信息学报, 2004, 2(4): 314-317 |
| 作者姓名： | 许献国 杨怀民 胡建栋 |
| 作者单位： | 1. 中国工程物理研究院,电子工程研究所,四川,绵阳,621900;北京邮电大学,电信学院,北京,100087 2. 中国工程物理研究院,电子工程研究所,四川,绵阳,621900 3. 北京邮电大学,电信学院,北京,100087 |
| 基金项目： | 国防科技基础研究基金(413110402) |
| 摘 要： | 中、大规模CMOS器件受到瞬态辐射时，出现了闭锁单窗口、多窗口现象。为了获得闭锁窗口的出现原因，借助对窗口现象的有关参考文献的研究，利用计算机电路模拟软件，分析了CMOS器件多个闭锁路径之间的相互作用。在此基础上，提出了解释窗口现象的“三径”闭锁模型。应指出的是，该闭锁模型还需要试验上的进一步验证与支持。 |
| 关 键 词： | 核电子学 “三径”闭锁模型 计算机模拟 闭锁窗口 闭锁路径 CMOS器件 |
| 文章编号： | 1672-2892(2004)04-0314-04 |
| 修稿时间： | 2004-03-22 |
Analysis of Latch-up Single Window and Multi-window Phenomena in CMOS Devices |
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| XU Xian-guo,YANG Huai-min,HUJian-dong. Analysis of Latch-up Single Window and Multi-window Phenomena in CMOS Devices[J]. Journal of Terahertz Science and Electronic Information Technology, 2004, 2(4): 314-317 | |
| Authors: | XU Xian-guo YANG Huai-min HUJian-dong |
| Abstract: | When CMOS devices are irradiated by transient radiation, phenomena of latch-up single window or multi-window may appear. To find the cause of latch-up window phenomena many references concerned in detail are studied and the reciprocity of several paths in CMOS devices is analyzed by circuit simulation software on computer. Based on this, a "three-path" latch-up model is developed to explain the window phenomena. Nevertheless this model needs verification and supports by experiments later. |
| Keywords: | nuclear electronics," three-path" latch-up model,computer simulation,latch-up window,latch-up path,CMOS devices |
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