Proposed scheme for polarization insensitive GaInNAs-based semiconductor optical amplifiers |
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| Authors: | Alexandropoulos D Adams MJ Hatzopoulos Z Syvridis D |
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| Affiliation: | Dept. of Informatics & Telecommun., Univ. of Athens, Greece; |
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| Abstract: | A novel scheme for polarization insensitive GaInNAs-based semiconductor optical amplifiers is proposed in which TE and TM polarization gain is almost equal for GaInNAs quantum wells with GaInAs barriers. The proposed scheme involves the growth of GaInAs metamorphic layers on GaAs. Based on a k /spl middot/ p Hamiltonian that accounts for the N-induced modifications of the bandstructure, we calculate the optical properties of GaInNAs-GaInAs quantum wells and explore the effect of GaInAs barriers on the valence band mixing effects. The TE and TM amplifier gain of GaInNAs-based semiconductor optical amplifiers with GaInAs barriers is then analyzed. |
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