Annealing studies of Be-implanted GaAs0.6P0.4 |
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| Authors: | W V McLevige K V Vaidyanathan B G Streetman J Comas L Plew |
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| Affiliation: | (1) Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois, 61801 Urbana-Champaign, IL;(2) Naval Research Laboratory, 20375, Washington, D.C.;(3) Naval Weapons Support Center, 47522 Crane, IN;(4) Present address: Sandia Laboratories, 87115 Albuquerque, NM |
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| Abstract: | Differential resistivity and Hall effect measurements and secondary ion mass spectrometry (SIMS) are used to study the annealing
behavior of Be-implanted GaAs0.6P0.4. Results similar to that previously reported for Be-implanted GaAs are observed, including outdiffusion of Be into the Si3N4 encapsulant during 900‡C annealing of high dose implants. Nearly all (85–100%) of the Be remaining after a 900‡C, 1/2 hr
anneal is electrically active. However, the electrical activation at low annealing temperatures (600–700‡C) is much lower
in GaAs0.6P0.4 than in GaAs. A substantial amount of diffusion is observed even for the low fluence Be implants in GaAs0.6P0.4 annealed at 900‡C, indicating a greater dependence of the diffusion on defect-related effects in the ternary.
This work was supported by the Joint Services Electronics Program (U.S. Army, U.S. Navy, U.S. Air Force) under Contract DAAB-07-72-C-0259,
by Monsanto Company, and by the Naval Electronic Systems Command.
On leave at Cornell University, Department of Electrical Engineering, Ithaca, NY 14853. |
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| Keywords: | ion implantation III-V compounds |
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