| Ku波段GaAs单片接收机 |
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| 引用本文： | 陈晓明 陈克金. Ku波段GaAs单片接收机[J]. 固体电子学研究与进展, 1997, 17(2): 103-109 |
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| 作者姓名： | 陈晓明 陈克金 |
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| 作者单位： | 南京电子器件研究所!210016 |
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| 基金项目： | 国家“八五”重点科技攻关项目 |
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| 摘 要： | 报道了工作频率分别为10.7-11．6GHz和11．7－12．2GHzGaAs单片接收机的研制结果。接收机并包括四种电路，即低噪声效大器、介质稳频振荡器、混频器和中频放大器。电路均采用GaAs全离子注入平面工艺创作，并封装在金属管壳内测试．10．7－11．6GHz接收机的噪声系数达到3．5dB，增益大于35dB；11．7－12.2GHz接收机的噪声系数可达到4dB，增益大于31dB。
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| 关 键 词： | 接收权 单片电路 砷化镓 |
Ku-band GaAs Monolithic Receivers |
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| Chen Xiaoming Chen Kejin. Ku-band GaAs Monolithic Receivers[J]. Research & Progress of Solid State Electronics, 1997, 17(2): 103-109 |
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| Authors: | Chen Xiaoming Chen Kejin |
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| Abstract: | The GaAs monolithic receivers operating in the range from 10. 7 to 11. 6 GHz and from 11. 7 to 12' 2 GHz were developed. The receiver consists of a low noise amplifier,a dielectric resonator oscillator,a mixer and an IF amplifier. Each circuit is fabricated by the planar ion implantation procedure and all are housed in a metal package. The noise figure of the receiver for 10. 7-11. 6 GHz is 3. 5 dB and its gain is more than 35 dB. The noise figure of the receiver for 11. 7-12. 2 GHz is 4. 0 dB and its gain is more than 31 dB |
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| Keywords: | Receiver Monolithic circuit GaAs |
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