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Low temperature wafer bonding for thin silicon film transfer |
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| Authors: | D K S S P P D |
| Affiliation: | a Institute of Microelectronics, NCSR ‘Demokritos’, Aghia Paraskevi, 15310, Athens, Greece b ENSERG, 23 Av. Des Martyrs, 38016, Grenoble, France c Department of Applied Sciences of National Technical University of Athens, Zografou, 15780, Athens, Greece |
| Abstract: | In this work, we investigate the low temperature (<200 °C) wafer bonding using wet chemical surface activation and we demonstrate high bonding strength sufficient to achieve the transfer of a thin silicon film of thickness less than 400 nm on top of another silicon wafer using spin-on-glass (SOG) film as an intermediate layer. The process developed is the first critical step that can enable three-dimensional (3D) integration and wafer level packaging of MEMS with electronic circuits. |
| Keywords: | Silicon wafer bonding Low temperature bonding Bond strength Plasma activation Silicon-on-insulator (SOI) |
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