TVS二极管用于半导体桥静电安全性研究?

为了加强半导体桥(SCB)的静电安全性,利用TVS二极管抗浪涌特性,分别对经TVS二极管加固前、后的SCB进行静电安全性研究。研究结果发现:并联TVS二极管后,SCB的发火时间无显著性变化;在500 p F、不串电阻条件下,SCB在6 k V条件下均未发火,在8 k V条件下均发火;在500 p F、不串电阻条件下,TVS二极管加固后的SCB在9 k V条件下均未发火,在13 k V条件下均发火;9 k V静电作用后,TVS加固后SCB的发火时间无显著性变化。因此,TVS二极管既能不影响SCB的正常发火性能,又能有效提高SCB的静电安全性。

Electrostatic Safety of Semiconductor Bridge with External TVS Diodes

In order enhance electrostatic safety of the semiconductor bridge (SCB), two kinds of SCB,including SCB and SCB with external TVS diodes, were tested in the electrostatic discharge experiment because of the surge handling capability of TVS diodes. The results show that the ignition time of SCB paralleling TVS diodes has no significant changes. On the conditions of 500 pF without series resistance,SCB does not fine at 6 kV and full fine at 8 kV, while SCB paralleling TVS diodes does not fine at 9 kV and full fine at 13 kV. Ignition time of SCB with TVS diodes has no significant changes after 9 kV electrostatic discharge experiment. It’s concluded that TVS diodes have no influence on normal ignition perfor-mance of SCB, and can improve the electrostatic safety of SCB effectively.