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Is the be incorporation the same in (311)A and (100) AlGaAs? |
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| Authors: | N Galbiati E Grilli M Guzzi M Henini and L Pavesi |
| Affiliation: | 1 Istituto Nazionale per la Fisica dells Materia and Dipartimento di Fisica, Università di Milano, via Celoria 16, 1-20133, Milano, Italy 2 Department of Physics, University of Nottingham, University Park, Nottingham NG7 2RD, UK 3 Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050, Povo, Italy |
| Abstract: | The incorporation of the Be acceptor in AlxGa1 − xAs grown by molecular beam epitaxy on (100) and (311)A oriented substrates is investigated by photoluminescence and electrical measurements. Values of the Be binding energy slightly lower than the commonly accepted ones have been found: 32 ± 4 meV at x  0.24. The incorporation efficiency is slightly greater in (311)A than in (100) oriented AIxGa1 − xAs. The Be doping of (311)A oriented AIx-Ga1 − xAs produces materials of higher electrical and optical properties than the Be doping of (100) oriented AlxGa1 − xAs. |
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