碲镉汞晶体结构性质的电子显微术研究

采用扫描电子显微术对布里奇曼法、固态再结晶法和碲溶剂法生长的Ｈｇ１－ｘＣｄｘＴｅ晶体的结构性质进行了研究，结果表明位错和亚晶界是三种方法所得晶体的主要缺陷，而位错和亚晶界的形态与分布则取决于被研究面的结晶学取向。实验还观察到经过长期高温退火的晶体中单个位错成规则的点阵分布，或排列成位错墙。此外也观察到孪晶，多晶以及第二相等结构缺陷。

Study on the Microstructure of Hg1-xCdxTe Crystals by Scanning Electron Microscopy

Hg1-x CdxTe Crystals grown by Bridgman, an olid state recrystallization and Te-solvent methods have been characterized by scanning electron microscopy. Results indicate that dislocations and sud-grain boundaries are the dominant defects in all the crystals, but the configuration and distributiom of these defects depend on the crystalline orientation of the surfaces examined. It was shown that long period annealing at high temperature made the dislocations align themselves into regular array and walls. In addition to the defects mentioned above, the microtwins lamellas, polycrystals and secondary phases are also revealed