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石墨烯掺杂和烧结温度对MgB<sub>2</sub>块体微观结构和超导性能的影响
引用本文:杨芳,刘浩然,王庆阳,熊晓梅,闫果,冯建情,李少强,李成山,冯勇.石墨烯掺杂和烧结温度对MgB<sub>2</sub>块体微观结构和超导性能的影响[J].稀有金属材料与工程,2019,48(12):3819-3823.
作者姓名:杨芳  刘浩然  王庆阳  熊晓梅  闫果  冯建情  李少强  李成山  冯勇
作者单位:西北有色金属研究院,西北工业大学,西北有色金属研究院,西北有色金属研究院,西部超导材料科技股份有限公司,西北有色金属研究院,西部超导材料科技股份有限公司,西北有色金属研究院,西部超导材料科技股份有限公司
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
摘    要:我们采用未掺杂的粉末制备了MgB&lt;sub&gt;2&lt;/sub&gt;块体作对比,研究了石墨烯掺杂对MgB&lt;sub&gt;2&lt;/sub&gt;块材微观结构和超导性能的影响,研究了退火温度对石墨烯掺杂MgB&lt;sub&gt;2&lt;/sub&gt;块材微观结构和超导性能的影响。对烧结后的样品采用XRD,SEM,SQUID进行了相组成,微观结构和超导性能等分析检测。研究发现石墨烯掺杂明显提高了MgB&lt;sub&gt;2&lt;/sub&gt;超导材料的临界电流密度,在20 K和1 T磁场下,最大的临界电流密度达到1.8&#215;10&lt;sub&gt;5&lt;/sub&gt;A/cm&lt;sub&gt;2&lt;/sub&gt;。

关 键 词:MgB&  lt  sub&  gt  2&  lt  /sub&  gt      掺杂  烧结  微观结构  临界电流密度
收稿时间:2018/6/4 0:00:00
修稿时间:2018/9/28 0:00:00

Effect of graphene doping and sintering temperature on microstructure and superconducting properties of MgB&lt;sub&gt;2&lt;/sub&gt; bulks
Yang Fang,Liu Haoran,Wang Qingyang,Xiong Xiaomei,Yan Guo,Feng Jianqing,Li Shaoqiang,Li Chengshan and Feng Yong.Effect of graphene doping and sintering temperature on microstructure and superconducting properties of MgB<sub>2</sub> bulks[J].Rare Metal Materials and Engineering,2019,48(12):3819-3823.
Authors:Yang Fang  Liu Haoran  Wang Qingyang  Xiong Xiaomei  Yan Guo  Feng Jianqing  Li Shaoqiang  Li Chengshan and Feng Yong
Abstract:The effect of graphene doping on the microstructure and superconducting properties of MgB&lt;sub&gt;2&lt;/sub&gt; bulks has been examined in comparison with the case of un-doped MgB&lt;sub&gt;2&lt;/sub&gt;. The correlations among annealing temperatures, microstructures and superconducting properties in graphene doped MgB&lt;sub&gt;2&lt;/sub&gt; bulks were investigated. The phase, microstructure and superconductivity of MgB&lt;sub&gt;2&lt;/sub&gt; were characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM) and superconducting quantum interference device (SQUID). It is found that the grapheme doping results in an obviously improvement of the critical current density. The highest critical current density reaches 1.8&#215;10&lt;sub&gt;5&lt;/sub&gt;A/cm&lt;sub&gt;2&lt;/sub&gt; at 20 K and 1 T.
Keywords:MgB&  lt  sub&  gt  2&  lt  /sub&  gt    doping  sintering  Microstructure  Critical current density
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