GaAs结构在单轴加压下的光致发光特性测试

研究了一种GaAs层结构在[110]方向外部单轴应力下基于光致发光(PL)谱的测试方法.层结构的应力由螺旋测微器施加,可以产生平面内的压(拉)应力和应变,大小可以由胡克定律算出.随着应力的增大,观察到了谱峰明显的蓝移.在一系列的加压后,在 1.432 eV,有一个新的峰出现在原有的峰的肩部附近,随着压力增加,两个峰逐渐分开.同时 PL 峰的半峰宽随着应力增加而逐渐加大.最后,本文根据实验结果分析了静水和单轴应力的不同.

Study on Photoluminescence Test for GaAs Layers under External Uniaxial Stress

In this paper,a testing method for photoluminescence(PL) spectrum of GaAs under external uniaxial stress paralleling direction is presented.The stress was applied by a helix micrometer.The in-plane compressive or tensile strains were created and the stress in the sample can be calculated according to Hooke's law.A blue shift was observed with increasing stress.After forcing a series of pressure,a new peak started at 1.432eV around the shoulder of the original luminescence peak.With the stress increased,two peaks were split apparently and the FWHM broadening of the PL peaks appeared.Finally,the difference between hydrostatic and uniaxial stress is analyzed according to the experiment results.