Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation |
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| Authors: | Sheng-Yao Huang Ting-Chang Chang Min-Chen Chen Shu-Wei Tsao Shih-Ching Chen Chih-Tsung Tsai Hung-Ping Lo |
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| Affiliation: | a Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC;b Center for Nanoscience & Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC;c Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC |
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| Abstract: | The effect of ammonia gas on amorphous indium gallium zinc oxide thin film transistors is investigated. The ammonia is incorporated into the sputtered a-IGZO film during the deposition process. The results indicate that the sub-threshold swing of the NH3 incorporated TFTs is significantly improved from 2.8 to 1.0 V/decade, and the hysteresis phenomenon is also suppressed during the forward and reverse sweeping measurement. By X-ray photoelectron spectroscopy analyses, Zn-N and O-H bonds are observed in ammonia incorporated a-IGZO film. Therefore, the improvements in the electrical performance of TFTs are attributed to the passivation of dangling bonds and/or defects by ammonia. |
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| Keywords: | Indium gallium zinc oxide (IGZO) Thin film transistors (TFTs) Ammonia (NH3) |
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