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Ion beam synthesis and recrystallization of amorphous SiGe/SiC structures |
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| Authors: | A P rez-Rodrí guez A Ramano-Rodrí guez C Serre L Calvo-Barrio R Cabezas J R Morante J Calderer H Reuther and W Skorupa |
| Affiliation: | a EME, Dept. Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 645-647, 08028, Barcelona, Spain b Dept. Enginyeria Eletrònica, Universitat Politècnica de Catalunya, Campus Nord C4, 08034, Barcelona, Spain c Forschungszentrum Rossendorf e.V., Institut für Ionenstrahlphysik und Materialforschung, Postfach 510119, D-01314, Dresden, Germany |
| Abstract: | Si1?xGex amorphous layers implanted with different doses of carbon (between 5 × 1015 and 2 × 1017 cm?2 and annealed at 700°C and 900°C have been analyzed by Raman and Infrared spectroscopies, electron microscopy and Auger electron spectroscopy. The obtained data show the synthesis of amorphous SiC by implanting at the highest doses. In these cases, recrystallization only occurs at the highest annealing temperature (900°C). The structure of the synthesized SiC strongly depends on the implantation dose, in addition to the anneal temperature. For the highest dose (2 × 1017 cm?2), crystalline β-SiC is formed. Finally, a strong migration of Ge towards the Si substrate is observed from the region where SiC precipitation occurs. |
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