| UHF-L波段低噪声GaAs双栅MESFET |
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| 引用本文： | 郑瑞英.UHF-L波段低噪声GaAs双栅MESFET[J].固体电子学研究与进展,1983(1). |
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| 作者姓名： | 郑瑞英 |
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| 摘 要： | 本文采用二维直流传输特性和s、y参数分析双栅MESFET的性能,介绍了器件设计和实验结果.得到的最佳性能为:在1GHz下噪声系数0.7dB,相关增益22.4dB;在1.9GHz下,噪声系数0.9dB,相关增益15.5dB.
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Low Noise Dual-Gate GaAs MESFETs in UHF-L-Band |
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| Abstract: | This paper analyses dual-gate MESFET performances by two-dimensional DC transfre characteristic, and s- and y- parameters. Both device design and experimental results are presented. The opttimun results of noise figure and associated gain are obtained: 0.7dB, 22.4dB at 1GHz; 0.9dB 15.5db, at 1.9GHz. |
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