| 掺杂Sm2O3对BaSrTiO3介电陶瓷性能的影响 |
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| 引用本文： | 李远亮,曲远方,张庆军,王冉然. 掺杂Sm2O3对BaSrTiO3介电陶瓷性能的影响[J]. 电子元件与材料, 2010, 29(10) |
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| 作者姓名： | 李远亮 曲远方 张庆军 王冉然 |
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| 作者单位： | 河北理工大学分析测试中心,河北唐山063009;天津大学先进陶瓷与加工技术教育部重点实验室,天津300072;天津大学先进陶瓷与加工技术教育部重点实验室,天津,300072;河北理工大学分析测试中心,河北唐山,063009;天津海运职业学院轮机工程系,天津,300457 |
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| 基金项目： | 河北省教育厅科学计划资助项目，河北理工大学博士启动基金 |
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| 摘 要： | 以碳酸钡、碳酸锶和二氧化钛等为原料,Sm2O3为掺杂剂,制备了BaSrTiO3系介质陶瓷。利用SEM等仪器研究了陶瓷试样的微观形貌和介电性能。结果表明:当Sm2O3掺杂量低于0.10%摩尔分数时,Sm3+进入晶格A位;但随着Sm2O3掺杂量的增加,Sm3+越来越倾向于进入晶格B位。在Sm2O3掺杂量为摩尔分数0.10%时,BaSrTiO3陶瓷的相对介电常数达到最高值4800;随着Sm2O3掺杂量继续增加,陶瓷的介电损耗逐渐降低,最低降至0.0070。
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| 关 键 词： | BaSrTiO3 Sm2O3掺杂 介电性能 居里温度 微观形貌 |
Effects of Sm2O3 doping on the dielectric properties of BaSrTiO3 ceramics |
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| LI Yuanliang,QU Yuanfang,ZHANG Qingjun,WANG Ranran. Effects of Sm2O3 doping on the dielectric properties of BaSrTiO3 ceramics[J]. Electronic Components & Materials, 2010, 29(10) |
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| Authors: | LI Yuanliang QU Yuanfang ZHANG Qingjun WANG Ranran |
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| Abstract: | Sm2O3-doped BaSrTiO3 dielectric ceramics were prepared with BaCO3, SrCO3 and TiO2 as raw materials. The micromorphology and dielectric properties of the prepared ceramics were studied. The results show that Sm3+ occupies the A-site of the perovskite lattice when the amount of Sm2O3 is less than 0.1% (mole fraction). However, when the Sm2O3 content is above 0.1%(mole fraction), Sm3+ tends to occupy the B-site. The relative permittivity of BaSrTiO3 ceramics reaches its maximum value of 4 800 when 0.1%(mole fraction) Sm2O3 is doped. And, the dielectric loss of BaSrTiO3 ceramics decreases remarkably with further increase in the Sm2O3 content and reaches its minimum value of 0.007 0 when the content of Sm2O3 is 0.8% (mole fraction). |
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| Keywords: | BaSrTiO3 |
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