| 硅单晶材料发展动态 |
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| 引用本文： | 邓志杰. 硅单晶材料发展动态[J]. 稀有金属, 2000, 24(5): 369-372 |
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| 作者姓名： | 邓志杰 |
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| 作者单位： | 北京有色金属研究总院,北京,100088 |
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| 摘 要： | 概述了现代特大规模集成电路对硅单晶片的质量要求、直拉砷单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
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| 关 键 词： | 直拉单晶 集成电路 ULSI 硅单晶材料 发展动态 |
| 修稿时间： | 2000-05-11 |
Development and Tendency of Silicon Crystal Material |
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| Deng Zhijie. Development and Tendency of Silicon Crystal Material[J]. Chinese Journal of Rare Metals, 2000, 24(5): 369-372 |
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| Authors: | Deng Zhijie |
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| Abstract: | The quality requirements on Si wafer for modern ULSI,research progress on CZ Si crystal growth technology and wafer processing,the market situation and prospect were outlined. |
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| Keywords: | CZ technology Perfect Si Fast pulled Defect Wafer processing |
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