| GaN异质结的二维表面态 |
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| 引用本文： | 薛舫时. GaN异质结的二维表面态[J]. 半导体学报, 2005, 26(10): 1939-1944 |
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| 作者姓名： | 薛舫时 |
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| 作者单位： | 南京电子器件研究所,南京,210016 |
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| 摘 要： | 提出了氮化物表面强极化电荷产生薄吸附层形成的二维表面态新模型. 从薛定谔方程和泊松方程的自洽计算中得到了新的二维表面态. 计算了不同吸附层能带带阶、厚度和表面势下的表面状态，研究了表面态与异质结构间的关联. 算得的表面能级同实验测量数据相吻合. 用该态模型解释了氮化物产生高密度表面态的原因和深表面能级与较浅的瞬态电流激活能间的矛盾.
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| 关 键 词： | 氮化物表面 二维表面态 极化吸附层 电流崩塌 |
| 文章编号： | 0253-4177（2005）10-1939-06 |
| 收稿时间： | 2005-01-02 |
| 修稿时间： | 2005-06-10 |
Two Dimensional Surface States in a GaN Heterostructure |
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| Xue Fangshi. Two Dimensional Surface States in a GaN Heterostructure[J]. Chinese Journal of Semiconductors, 2005, 26(10): 1939-1944 |
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| Authors: | Xue Fangshi |
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| Affiliation: | Nanjing Electronic Devices Institute, Nanjing 210016, China |
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| Abstract: | A new model of two dimensional surface states produced by a strong polarized charge on a nitride heterostructure surface is presented.The Schrdinger equation and Poisson equation are solved self-consistently to calculate the new two dimensional surface states.The surface states for different band offsets,width of absorbed layers,and surface potentials are calculated,from which the relationship between surface states and heterostructures is discussed.The calculated surface levels agree with the experimental measurements.This new two dimensional surface states model explains the origin of surface states and the contradiction between deep surface levels and the low activation energy of a transient current. |
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| Keywords: | nitride surface two dimensional surface states polarization absorbed layer current collapse |
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