Electrical transport properties of bulk amorphous Gex Se1−x

d. c. -Conductivity measurements have been made as a function of temperature (80–330 K) on bulk amorphous samples of Ge_xSe_1?x (0.1 ? x ?0.7), in order to identify the conduction mechanism and to observe the effect of selenium -doping on the d. c.-conductivity of germanium. It is found that for samples with a low concentration of selenium (0. 5? x ? 0. 7 ), conduction in the high temperature region (330-180 K) is due to thermally assisted tunneling of electrons in the localized states at the conduction band edge, and in the low temperature region (80–190 K), conduction takes place through variable range hopping in the localized states near the Fermi level. The addition of selenium is found to increase the amorphicity of the samples. In the samples with a relatively high content of selenium (0.1 ? x ? 0.4), conduction in the entire temperature range of investigation is due to the thermally assisted tunneling of holes in the localized states at the valence band edge.