Numerical and experimental analysis of EMI effects on circuits with MESFET devices |
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Authors: | Han-Chang Tsai |
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Affiliation: | aDepartment of Electronic Engineering, Chen-Shiu University, No. 840, Chengcing Road, Neau Song Township, Kaohsiung County 833, Taiwan, ROC |
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Abstract: | This study develops theoretical formulae to model the time domain and frequency domain characteristics of the noise spectrum of a MESFET device induced by varying EMI conditions. The theoretical results are then compared with the experimental measurements. The experimental and numerical results reveal that the magnitude of the EMI-induced noise is related to the pulse height, the output load, the parasitic capacitance, the interference frequency and the interference amplitude. It is shown that a higher interference amplitude or frequency increases the harmonic noise. The theoretical method presented in this paper provides a convenient means of evaluating the EMI effects and signal-to-noise ratio (SNR) of MESFET and similar wavelength devices. |
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