掺硼四面体非晶碳膜的微观结构及光谱表征

分别采用过滤阴极真空电弧技术制备了不同含硼量四面体非晶碳(ta-C:B)膜, 并用X射线光电子能谱(XPS)、Raman光谱对薄膜的微观结构和化学键态进行了研究. XPS分析表明薄膜中B主要以石墨结构形式存在, 随着B含量的增加, sp³杂化碳的含量逐渐减小, Ta-C:B膜的Raman谱线在含硼量较高时, 其D峰和G峰向低频区偏移, 且G峰的半峰宽变窄, 表明B的引入促进了sp²杂化碳的团簇化, 减小了原子价键之间的变形, 从而降低了薄膜的内应力．

Spectroscopic Characterization of Boron Doped Tetrahedral Amorphous Carbon

A set of boron doped tetrahedral amorphous carbon (ta-C:B) films were prepared in a filtered cathodic vacuum arc system using boron mixed graphite as targets with weight percentage ranging from 0 to 15%. The chemical bonding states of ta-C:B were studied by X-ray photoelectron spectroscope. The result shows that B is mainly threefold coordinated and the fraction of sp³ hybridized carbon decreases in magnitude with increasing boron content. Raman analysis also shows that the introduction of B in the ta-C:B films facilitates the clustering of sp² carbon sites which reduces the bonding distortion and intrinsic stress of the films.