A NOVEL Ku-BAND LOW NOISE AMPLIFIER WITH HEMT AND GaAs MMIC

A novel Ku-band low noise amplifier with a high electron mobility transistor (HEMT)and a GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noisefigure is less-than 1.9dB with an associated gain larger than 27dB and an input/output VSWRless than 1.4 in the frequency range of 11.7-12.2GHz. The HEMT and the microwave series in-ductance feedback technique are used in the first stage of the amplifier, and a Ku-band MMIC isemployed in the last stage. The key to this design is to achieve an optimum noise match and a min-imum input VSWR matching simultaneously by using the microwave series inductance feedbackmethod. The B J-120 waveguides are used in both input and output of the amplifier.

A novel Ku-Band low noise amplifier with hemt and GaAs MMIC

A novel Ku-band low noise amplifier with a high electron mobility transistor (HEMT) and a GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noise figure is less-than 1.9dB with an associated gain larger than 27dB and an input/output VSWR less than 1.4 in the frequency range of 11.7-12.2GHz. The HEMT and the microwave series in- ductance feedback technique are used in the first stage of the amplifier, and a Ku-band MMIC is employed in the last stage. The key to this design is to achieve an optimum noise match and a min- imum input VSWR matching simultaneously by using the microwave series inductance feedback method. The B J-120 waveguides are used in both input and output of the amplifier.