| 3.4nm超薄SiO2栅介质的特性 |
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| 引用本文： | 许晓燕,谭静荣,高文钰,黄如,田大宇,张兴. 3.4nm超薄SiO2栅介质的特性[J]. 电子学报, 2002, 30(2): 269-270 |
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| 作者姓名： | 许晓燕 谭静荣 高文钰 黄如 田大宇 张兴 |
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| 作者单位： | 北京大学微电子学研究所,北京 100871 |
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| 基金项目： | 国家自然科学基金，国家重点基础研究发展计划(973计划)，69976001，20000365，， |
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| 摘 要： | 用LOCOS工艺制备出栅介质厚度为3.4nm的MOS电容样品,通过对样品进行I-V特性和恒流应力下V-t特性的测试,分析用氮气稀释氧化法制备的栅介质的性能,同时考察了硼扩散对栅介质性能的影响.实验结果表明,制备出的3.4nm SiO2栅介质的平均击穿场强为16.7MV/cm,在恒流应力下发生软击穿,平均击穿电荷为2.7C/cm2.栅介质厚度相同的情况下,P+栅样品的击穿场强和软击穿电荷都低于N+栅样品.
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| 关 键 词： | 超薄栅介质 软击穿 硼扩散 |
| 文章编号： | 0372-2112(2002)02-0269-02 |
| 收稿时间： | 2001-02-16 |
Electrical Characteristics of 3.4nm Gate Oxide |
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| XU Xiao yan,TAN Jing rong,GAO Wen yu,HUANG Ru,TIAN Da yu,ZHANG Xing. Electrical Characteristics of 3.4nm Gate Oxide[J]. Acta Electronica Sinica, 2002, 30(2): 269-270 |
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| Authors: | XU Xiao yan TAN Jing rong GAO Wen yu HUANG Ru TIAN Da yu ZHANG Xing |
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| Affiliation: | Institute of Microelectronics,Peking University,Beijing 100871,China |
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| Abstract: | MOS capacitors with 3 4nm gate oxide layer were manufactured in this experiment.By measuring current voltage characteristic and evolution of the gate voltage during constant current stress of the capacitors,the electrical characteristics of the gate oxide have been studied.In addition,the effect of boron penetration on gate oxide was investigated.The experimental results showed that the average breakdown field of the 3 4nm gate oxide was 16 7MV/cm.Under constant current stress,soft breakdown occured and the average charge to breakdown was 2 7C/cm 2.For p + polysilicon gate MOS capacitor,breakdown field and charge to breakdown of gate oxide were all decreased because of boron penetration. |
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| Keywords: | ultra thin gate oxide soft breakdown boron penetration |
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