| 一种结构新颖的锗硅NPN HBT器件特性研究 |
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| 引用本文： | 刘冬华,段文婷,石晶,胡君,陈帆,黄景峰,钱文生,肖胜安,朱东园.一种结构新颖的锗硅NPN HBT器件特性研究[J].固体电子学研究与进展,2013(1):32-36. |
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| 作者姓名： | 刘冬华 段文婷 石晶 胡君 陈帆 黄景峰 钱文生 肖胜安 朱东园 |
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| 作者单位： | 上海华虹NEC电子有限公司 |
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| 基金项目： | 国家科技02专项十一五重大资助项目(2009ZX02303) |
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| 摘 要： | 对一种结构新颖的锗硅NPN HBT器件的特性进行了研究。通过分析器件发射极窗口宽度W和长度L对器件直流和交流特性的影响,对器件在结构上和制作工艺上进行了优化,得到性能与业界可比的三种不同耐压水平的器件(高速器件、标准器件和高压器件),并且成功地被应用于光通讯和射频功放等商业产品中。
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| 关 键 词： | 锗硅NPN异质结三极管 电流增益 截止频率 |
Study on the Characteristics of the SiGe NPN HBT with Novel Structure |
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| LIU Donghua,DUAN Wenting,SHI Jing,HU Jun,CHEN Fan,HUANG JingfengQIAN Wensheng,XIAO Sheng′an ZHU Dongyuan.Study on the Characteristics of the SiGe NPN HBT with Novel Structure[J].Research & Progress of Solid State Electronics,2013(1):32-36. |
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| Authors: | LIU Donghua DUAN Wenting SHI Jing HU Jun CHEN Fan HUANG JingfengQIAN Wensheng XIAO Sheng′an ZHU Dongyuan |
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| Affiliation: | (Shanghai Huahong NEC Electronics Company,Shanghai,201206,CHN) |
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| Abstract: | The paper studies the characteristics of a SiGe NPN HBT with novel structure.Through analyzing the effect of width and length of emitter window,the device performance has been optimized by adjusting device structure and manufacturing process.Three devices with different working voltage and operation speed have achieved comparable industry performance and implemented successfully in optical communication and RF PA products. |
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| Keywords: | SiGe NPN hetero-junction bipolar transistor(HBT) current gain cut-off frequency |
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