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基于压阻检测的双端固支硅纳米梁谐振特性研究
引用本文:赵全斌,焦继伟,杨恒,林梓鑫,李铁,张颖,王跃林. 基于压阻检测的双端固支硅纳米梁谐振特性研究[J]. 传感技术学报, 2006, 19(5): 1705-1708
作者姓名:赵全斌  焦继伟  杨恒  林梓鑫  李铁  张颖  王跃林
作者单位:1. 中国科学院上海微系统与信息技术研究所,传感技术国家重点实验室,上海,200050;中国科学院研究生院,北京,100039
2. 中国科学院上海微系统与信息技术研究所,传感技术国家重点实验室,上海,200050
基金项目:国家重点基础研究发展计划(973计划)
摘    要:我们利用压阻检测法对双端固支硅纳米梁的谐振特性进行了研究.在(111)硅衬底上,用KOH选择性腐蚀制作出了厚度约为242 nm的双端固支硅纳米梁;对梁上表面采用Ar离子进行局部轰击,受轰击侧的原子结构遭到破坏,电导率显著下降,未受轰击侧原子结构则保持原掺杂结构,在梁厚度方向形成非对称掺杂,表现出压阻特性.利用该局部压阻,我们首次完成了对双端固支硅纳米梁的谐振特性的测量,其共振频率为400 kHz;同时,我们对获得的低Q值进行了初步讨论.

关 键 词:双端固支硅纳米梁  压阻检测  Ar离子轰击  谐振特性
文章编号:1004-1699(2006)05-1705-04
修稿时间:2006-07-01

Study on resonance response of piezoresistive double-clamped silicon nano-beam
Quanbin Zhao,Jiwei Jiao,Heng Yang,Zixin Lin,Tie Li,Ying Zhang,Yuelin Wang. Study on resonance response of piezoresistive double-clamped silicon nano-beam[J]. Journal of Transduction Technology, 2006, 19(5): 1705-1708
Authors:Quanbin Zhao  Jiwei Jiao  Heng Yang  Zixin Lin  Tie Li  Ying Zhang  Yuelin Wang
Affiliation:1 State Key L aboratory of Trans ducer Technology , S hanghai I nsti tute of Micros ystem and Inf ormat ion Technology ,Chinese Academy of Sciences 2 Graduate School of the Chinese Academy of Sciences
Abstract:We investigate the resonant response of piezoresistive double-clamped silicon nano-beam. On Si (111) substrate, double clamped nano beam with a thickness of 242nm has been fabricated by using KOH anisotropic etching and other conventional MEMS processes. High energy Argon ion bombardment was then applied on selected area of the top side of the nano beam. The asymmetry along thickness direction resulted from top layer with partly broken bonds and the remaining unbombarded layer demonstrates its local piezoresistivity. The localized piezoresistor was used in air to characterized the resonant response of the double-clamped Si nanobeam. The resonant frequence and Q-factor were obtained, which are 400 kHz and 7.9 respectively. The energy dissipation led by damaged atomic structure has been discussed to explain the unexpected much lower Q factor.
Keywords:double-clamped silicon nano beam  piezorestive effect  Ar ions bombardment  resonant response
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