The performance of double active region InGaAsP lasers |
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Authors: | Champagne A Maciejko R Glinski JM |
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Affiliation: | Dept. of Eng. Phys., Ecole Polytech., Montreal, Que.; |
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Abstract: | The light-current characteristic and temperature behavior of the double-carrier-confinement (DCC) InGaAsP laser are shown to be largely determined by Auger recombination. The carrier distributions in the two active regions, especially their relative fractions, play a major role in device behavior. A self-consistent, comprehensive numerical laser model is used to analyze a set of devices showing that superlinearity and possibly bistability are due to saturable absorption in the second active region and that a high characteristic temperature is usually tied with a higher threshold current density because of substantial Auger recombination rates in this type of device |
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