Sputtered copper films with insoluble Mo for Cu metallization: A thermal annealing study |
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| Authors: | C H Lin J P Chu T Mahalingam T N Lin S F Wang |
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| Affiliation: | (1) Institute of Materials Engineering, National Taiwan Ocean University, 202 Keelung, Taiwan;(2) Present address: Department of Electronic Materials, Chin-Min College, 351 Tou-Fen, Taiwan;(3) Present address: Department of Physics, Alagappa University, 630 003 Karaikudi, India;(4) Department of Materials and Minerals Resources Engineering, National Taipei University of Technology, 106 Taipei, Taiwan |
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| Abstract: | The thermal annealing behavior of Cu films containing insoluble 2.0 at. % Mo magnetron co-sputtered on Si substrates is discussed
in the present study. The Cu-Mo films were vacuum annealed at temperatures ranging from 200°C to 800°C. X-ray diffraction
(XRD) and scanning electron microscopy (SEM) observations have shown that Cu4Si was formed at 530°C, whereas pure Cu film exhibited Cu4Si growth at 400°C. Twins are observed in focused ion beam (FIB) images of as-deposited and 400°C annealed, pure Cu film,
and these twins result from the intrinsically low stacking-fault energy. Twins appearing in pure Cu film may offer an extra
diffusion channel during annealing for copper silicide formation. In Cu-Mo films, the shallow diffusion profiles for Cu into
Si were observed through secondary ion mass spectroscopy (SIMS) analysis. Higher activation energy obtained through differential
scanning calorimetry (DSC) analysis for the formation of copper silicide further confirms the beneficial effect of Mo on the
thermal stability of Cu film. |
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| Keywords: | Copper film sputter deposition thermal stability focused ion beam vacuum annealing |
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