An integrated thermo-capacitive type MOS flow sensor |
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Authors: | Kwang Ming Lin CheeYee Kwok Ruey Shing Huang |
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Affiliation: | Sch. of Electr. Eng., New South Wales Univ., Sydney, NSW; |
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Abstract: | A prototype of a new thermo-capacitive integrated flow sensor consisting of a floating-gate MOS transistor has been developed. Tantalum pentoxide is the dielectric material between the top (control) gate and the floating-gate. The temperature dependence of the dielectric constant is about 375 ppm/°C. The process flow is compatible with standard MOS process and augmented to include a capacitor module and bulk micromachining. The output voltage change at the flow velocity of 20 m/s is about 26 mV at 57 mW of heater power. The sensitivity in the 0-4 m/s flow velocity region is 4.25 mV(m/s)-1 |
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