Radiation damage induced by 5 keV Si ion implantation in strained-Si/Si<sub>0.8</sub>Ge<sub>0.2</sub>期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Radiation damage induced by 5 keV Si ion implantation in strained-Si/Si_0.8Ge_0.2

Authors:	T Matsushita W Sakai K Nakajima M Suzuki K Kimura A Agarwal H-J Gossmann M Ameen

Affiliation:	^aDepartment of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan ^bAxcelis Technologies, Inc., 108 Cherry Hill Drive, Beverly, MA 01915-1088, USA

Abstract:	The damage distributions induced by ultra low energy ion implantation (5 keV Si⁺) in both strained-Si/Si_0.8Ge_0.2 and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 × 10¹³ to 1 × 10¹⁵ ions/cm². Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 × 10¹⁴ to 4 × 10¹⁴ ions/cm² while the amorphous width is almost the same in both strained and normal Si.

Keywords:	Ion implantation Strained Si Radiation damage Two beam analysis
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