Effect of p-base sheet and contact resistances on staticcurrent-voltage characteristics of scaled low-voltage vertical powerDMOSFETs

Static current-voltage characteristics of low-voltage scaled power double-diffused MOSFETs fabricated using selectively formed TiSi₂ films on gate polysilicon and source contact regions are reported. It is shown that considerable modulation of drain-source current-voltage characteristics results from increased p-base sheet and contact resistances. This effect is found to vanish at higher operating temperatures. Increased p-base contact resistance also results in a large forward voltage drop for the body p-n junction diode