Statistical delay of microplasma breakdown in GaP p-n junctions

The mechanism for switching on a microplasma in gallium phosphide p-n junctions is investigated. It is shown that changing the distribution function of the statistical breakdown delay with respect to distance makes it possible to determine the energy spectrum of deep levels localized in the microplasma channels. In these experimental studies, commercial gallium phosphide AL102 red-light LEDs were used. In the temperature range 100–380 K the influence of a number of energy levels was detected. In these diodes, deep levels were observed to have an unusually strong effect on the statistical breakdown delay when their charge states are changed by a fractional decrease in the voltage across the p-n junction. Fiz. Tekh. Poluprovodn. 33, 1345–1349 (November 1999)