Control of Ga doping level in β-FeSi2 using Sn–Ga solvent |
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| Authors: | Haruhiko Udono Kazutaka Matsumura Isao J Ohsugi Isao Kikuma |
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| Affiliation: | a Department of Electrical and Electronic Engineering, Faculty of Engineering, Ibaraki University, 4-12-1 Nakanarusawa-cho, Hitachi-shi, Ibaraki 316-8511, Japan;b Salesian Polytechnic (IKUEI Kosen), 2-35-11 Igusa, Suginami-ku, Tokyo 167-0021, Japan |
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| Abstract: | We have grown n- and p-type β-FeSi2 single crystals by the temperature gradient solution growth method using Sn–Ga solvent. The conduction type and the carrier density of the crystals were controlled by the Ga composition in the Sn–Ga solvent. The conduction type was changed from n- to p-type between the Ga composition of 10.2 and 18.5 at% in the solvent. Depending on the Ga composition in the solvent, the carrier density of n- and p-type crystals was changed from 1.5×1017 to 3×1017 cm−3 and 4×1017 to 2×1019 cm−3, respectively. The activation energies of n-type crystals were 0.09–0.11 eV while that of p-type crystals were 0.02–0.03 eV. |
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| Keywords: | Author Keywords: β -FeSi2 Solution growth Single crystal Doping control |
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