| S波段T/R组件用GaN功率放大器链的设计(英文) |
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| 引用本文： | 姚小江,谢武涛,施鹤年,刘珊,胡永芳,赵亮.S波段T/R组件用GaN功率放大器链的设计(英文)[J].现代雷达,2011(8):56-57,61. |
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| 作者姓名： | 姚小江 谢武涛 施鹤年 刘珊 胡永芳 赵亮 |
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| 作者单位： | 南京电子技术研究所; |
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| 基金项目： | 国家十一五重大专项支持研究项目 |
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| 摘 要： | 基于Si衬底AlGaN/GaN HEMT器件的功率放大器链是下一代S波段相控阵雷达T/R组件的核心部分。研制的S波段放大器链主要由驱动放大器和功率放大器组成,驱动放大器与功率放大器都是基于Si衬底AlGaN/GaN HEMT器件的混合集成电路。基于混合集成电路的放大器链获得了高的输出峰值功率和附加功率(PAE),整个放大器链输出功率在800 MHz频率范围内大于20 W,附加效率(PAE)大于50%。
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| 关 键 词： | AlGaN/GaN HEMT器件 T/R组件 混合集成电路 高功率放大器 S波段 |
GaN High Power Amplifier Chain for S-band T/R Modules |
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| YAO Xiao-jiang,XIE Wu-tao,SHI He-nian,LIU Shan,HU Yong-fang,ZHAO Liang.GaN High Power Amplifier Chain for S-band T/R Modules[J].Modern Radar,2011(8):56-57,61. |
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| Authors: | YAO Xiao-jiang XIE Wu-tao SHI He-nian LIU Shan HU Yong-fang ZHAO Liang |
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| Affiliation: | YAO Xiao-jiang,XIE Wu-tao,SHI He-nian,LIU Shan,HU Yong-fang,ZHAO Liang(Nanjing Research Institute of Electronics Technology,Nanjing 210039,China) |
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| Abstract: | High power amplifier(HPA) chain based on Si-substrated AlGaN/GaN HEMT is the key component in next generation T/R modules for future S band phased array antenna.Designed S-band amplifier chain is composed of a driver and a power amplifier,both of which are HMICs based on Si-substrated AlGaN/GaN HEMT.In HMIC-Based amplifier chain design,excellent peak power level and associated power added efficiency(PAE) are realized.This amplifier is covering a bandwidth of 800MHz frequency rang with output power level hig... |
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| Keywords: | AlGaN/GaN HEMTs T/R module HMIC high power amplifier S-band |
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