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Effect of oxygen on ion-beam induced synthesis of SiC in silicon
Affiliation:1. Institute for Condensed Matter Physics, National Academy of Sciences of Ukraine, 1 Svientsitskii str., 79011 Lviv, Ukraine;2. Faculty of the Electrical Engineering, Czestochowa University of Technology, Al. Armii Krajowej 17, 42-200 Czestochowa, Poland;3. V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Prosp. Nauky, 03028 Kyiv, Ukraine;4. Lviv National Polytechnic University, 12 S. Bandery str., 79013 Lviv, Ukraine;5. Hamburg University of Technology, Center for Integrated Multiscale Materials Systems CIMMS, Eißendorferstr. 42, 21073 Hamburg, Germany;6. Center for X-ray and Nano Sciences CXNS, Deutsches Elektronen-Synchrotron DESY, 22603 Hamburg, Germany;7. Centre for Hybrid Nanostructures CHyN, Hamburg University, 22607 Hamburg, Germany;1. School of Materials Science and Engineering, Key Lab of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072, PR China;2. Research & Development Center of China Academy of Launch Vehicle Technology, Beijing 100076, PR China
Abstract:The properties of Si-structures with a buried silicon carbide (SiC) layer created by high-dose carbon implantation into Cz–Si or Fz–Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. The effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layer is more effectively formed in Cz–Si or in Si (Cz-or Fz-) subjected to additional oxygen implantation. So we can conclude that oxygen in silicon promotes the SiC layer formation due to SiOx precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed. Carbon segregation and amorphous carbon film formation on SiC grain boundaries were revealed.
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