Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation |
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| Affiliation: | 1. Institut für Schicht- und Ionentechnik (ISI-IT), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany;2. Daimler Benz-AG, Research and Technology 2, D-89081 Ulm, Germany;1. School of Science, Shenyang Ligong University, Shenyang 110159, China;2. Department of Materials Physics and Chemistry, School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China;3. Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China;1. HTW Berlin–University of Applied Sciences, PVcomB, Wilhelminenhofstr. 75a, D-12459 Berlin, Germany;2. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, PVcomB, Scharzschildstraße 3, D-12489 Berlin, Germany;3. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics, Kekuléstraße 5, D-12489 Berlin, Germany |
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| Abstract: | We propose a new method to fabricate strain relaxed high quality Si1−xGex layers on Si by hydrogen implantation and thermal annealing. Hydrogen implantation is used to form a narrow defect band slightly below the SiGe/Si interface. During subsequent annealing hydrogen platelets and cavities form, giving rise to strongly enhanced strain relaxation in the SiGe epilayer. As compared to thermally induced strain relaxed Si–Ge epilayers, the hydrogen implanted and annealed samples show a greatly reduced threading dislocation density and a much higher degree of strain relaxation (90%). We assume that the hydrogen induced defect band promotes strain relaxation via preferred nucleation of dislocation loops in the defect band which extend to the interface to form misfit segments. The samples have been investigated by X-ray diffraction, Rutherford backscattering spectrometry and transmission electron microscopy. |
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