In-line monitoring of 300 mm silicon epitaxial and CZ wafers using surface charge profiler |
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| Affiliation: | 1. QC Solutions, Inc., Woburn, MA 01801, USA;2. EURIS GmbH, Marktplatz 2-4, D-61118 Bad Vilbel, Germany;1. Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland;2. Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;1. School of Geography & Sustainable Development, University of St Andrews, United Kingdom;2. Associate in Sustainability, Beyond Imagination, Lancaster Institute for the Contemporary Arts (LICA), Lancaster University, LA1 4YW, United Kingdom;1. National Technical University of Athens, Heroon Polytechneiou 9, Zographou Campus, 157 80 Athens, Greece;2. imec, Kapeldreef 75, 3001 Heverlee, Belgium;3. Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, 3001 Heverlee, Belgium;1. Department of Emergency Medicine, Los Angeles County Harbor–UCLA Medical Center, Torrance, CA;2. David Geffen School of Medicine at UCLA, Los Angeles, CA;3. Department of Emergency Medicine, Oregon Health & Science University, Portland, OR;4. Department of Emergency Medicine, University of California Davis School of Medicine, Sacramento, CA;5. Department of Emergency Medicine, University of Iowa Hospitals and Clinics, Iowa City, IA;6. Department of Emergency Medicine, UCLA–Ronald Reagan/Olive View, Los Angeles, CA |
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| Abstract: | The surface charge profiler (SCP) offering non-contact electrical characterization of the near-surface region of silicon wafers is discussed. The system permits fully automatic handling of 300- and 200-mm wafers. The SCP method, based on a low intensity illumination a.c. surface photo-voltage principle, does not require any surface preparation. It allows for a fast (600 points/min), high-resolution mapping of the active doping concentration in the near-surface region as well as surface recombination lifetime. The capabilities of the SCP method for process monitoring and development are illustrated with 200- and 300-mm wafers, focusing on the effects of epi growth conditions on the layer uniformity and its resistivity. |
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