Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile |
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| Affiliation: | 1. Forschungszentrum Rossendorf, FWI, PF 510119, D-01314 Dresden, Germany;2. Center for Analysis of Substances, 1/4 Sretensky Blvd., 103045 Moscow, Russian Federation;1. Key Laboratory of Integrated Regulation and Resources Development of Shallow Lakes, Ministry of Education, Hohai University, 1st Xikang Road, Nanjing 210098, China;2. College of Environment, Hohai University, 1st Xikang Road, Nanjing 210098, China;1. Department of Oral Diagnosis, Piracicaba Dental School, State University of Campinas (UNICAMP), Piracicaba, São Paulo, Brazil;2. Department of Pathology, School of Medical Sciences, State University of Campinas (UNICAMP), Campinas, São Paulo, Brazil;3. Laboratory of Mass Spectrometry, Brazilian Biosciences National Laboratory (LNBio), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, Brazil;4. Department of Pathology, School of Medicine, University of Utah (UU), Salt Lake City, UT, United States;1. Department of Chemistry, The Scripps Research Institute, 130 Scripps Way, Jupiter, FL 33458, USA;2. Department of Molecular Medicine, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037, USA |
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| Abstract: | Damage has been observed in MeV-ion-implanted Si away from the maximum of the nuclear energy deposition profile, mainly around the half of the projected ion range, RP/2. Cu gettering has been used for the detection of irradiation defects which are formed during annealing at temperatures between 700°C and 1000°C. This damage is primarily created by the implanted ions on their trajectory and consists of intrinsic defects remaining so small that they have not yet been resolved. These defects undergo a defect evolution during annealing which results in a decrease of the width of the damage layer with increasing temperature and prolonged time of the annealing. |
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