Imaging of implantation defects by X-ray topography combined with surface acoustic wave excitation |
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| Affiliation: | 1. Key Lab for IOT and Information Fusion Technology of Zhejiang, Hangzhou Dianzi University, Zhejiang 310018, China;2. Institute of Information and Control, Hangzhou Dianzi University, Zhejiang, 310018, China;3. Faculty of Science and Technology, University of Macau, Macau, China;4. Department of Mathematics, China Jiliang University, Hangzhou, Zhejiang, 310018, China;1. Department of Mathematics and Computer Science, Auburn University at Montgomery, Montgomery, AL 36117, USA;2. Department of Mathematics, University of Kentucky, Lexington, KY 40506-0027, USA;3. Department of Mathematics, Faculty of Science and Technology, Gunma University, Kiryu 376-8515, Japan;4. Weapons and Material Research Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005-5069, USA |
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| Abstract: | X-ray topographs of the He-implanted LiNbO3 crystals under 10 μm-surface acoustic wave excitation were taken using monochromatized synchrotron radiation provided by the European Synchrotron Radiation Facility (ESRF, Grenoble). Measurements were made in the stroboscopic mode, i.e. by synchronizing the electron bunch frequency with the resonant frequency of the acoustic wave excitation in the 300 MHz range. These X-ray diffraction images showed plane acoustic wave propagation through the LiNbO3 crystals as well as wave front distortions due to scattering by extended defects. Secondary spherical waves were observed for the first time as a result of the strong interaction between the acoustic waves and the sub-micron size density perturbations. |
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