Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi2 |
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| Affiliation: | 1. Key Laboratory of Spectral Imaging Technology CAS, Xi''an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi''an, P.R. China;2. The Beijing Key Laboratory of Traffic Data Analysis and Mining, Beijing, P. R. China;3. The School of Computer and Information Technology Beijing Jiaotong University, Beijing, P.R. China;4. School of Computer Science and Engineering, North Minzu University, Yinchuan, Ningxia, P.R. China;1. School of Mathematics, Liaoning University, Shenyang 110036, China;2. Faculty of Engineering, Dogus University of Istanbul, Istanbul, Turkey;3. St Cyril & St Methodius University, School FEEIT, Skopje, Macedonia;4. State Key Laboratory of Synthetical Automation for Process Industries, Northeastern University, 110189, China |
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| Abstract: | Cobalt disilicide microstructures were formed by 70 keV Co2+ focused ion beam implantation into Si(1 1 1) at substrate temperatures of about 400°C and a subsequent two step annealing (600°C, 60 min and 1000°C, 30 min in N2). It was found that the CoSi2 layer quality strongly depends on the pixel dwell time and the implantation temperature. Only for properly chosen parameters continuous CoSi2 layers could be obtained. Scanning electron microscopy and Rutherford backscattering/channelling investigations were carried out combined with a special preparation technique for structures which are smaller than the analysing beam. The quality of the CoSi2 layers which is correlated to the damage was investigated as a function of dwell-time (1–250 μs) and target temperature (355–415°C). The results show that the irradiation damage increases with the dwell-time. The Si top layer was amorphized for longer dwell-times although the substrate temperature was always above the critical temperature for amorphization of about 270°C according to the model of Morehead and Crowder. For the high current density of a focused ion beam (1–10 A/cm2) the damage creation rate is higher than the rate of dynamic annealing. |
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