Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions |
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| Affiliation: | 1. A.F. Ioffe Physico-Technical Institute of RAS, 26 Polytechnicheskaya Str., 19402 St. Petersburg, Russian Federation;2. CCR GmbH, Beschichtungstechnologie TZO Rheinbreitbach, Maarweg 30, 53619 Rheinbreitbach, Germany;3. Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e.V., PF 510119, 01314 Dresden, Germany;4. Institut für Festkörperelektronik, TU Ilmenau, PF 100565, 98684 Ilmenau, Germany;1. School of Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ 08854, USA;2. Department of Physics, Maharshi Dayanand University, Rohtak 124001, India;3. School of Electrical, Electronics & Communication Engineering, Manipal University Jaipur 303007, India;1. Department of College of P.E and Sport, Beijing Normal University, Beijing, PR China;2. Department of Kinesiology, Shenyang Sport University, Shenyang, Liaoning, PR China;1. Laboratory of Industrial Chemistry, Ruhr-University Bochum, 44780 Bochum, Germany;2. Department of Materials Science, Faculty of Science, Kasetsart University, Bangkok 10903, Thailand;3. Chair for Materials Science and Engineering, Materials Science and Engineering, Ruhr-University Bochum, 44780 Bochum, Germany;1. Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing, 100124, China;2. Faculty of Materials and Manufacturing, National Engineering Laboratory for Industrial Big-data Application Technology, Beijing University of Technology, Beijing, 100124, China;3. Beijing Building Materials Testing Academy Co., Ltd, Beijing, 100041, China;4. College of Civil Engineering, Henan University of Engineering, Zhengzhou, 451191, China;5. China Building Materials Academy, Beijing, 100024, China;6. Tangshan Longyi Tech. Co., Ltd, Tangshan, 063004, China;1. State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Collaborative Innovation Center of Suzhou Nano Science and Technology, Xi''an Jiaotong University, Xi''an, 710049, China;2. School of Mechanical Engineering, Xi''an Jiaotong University, Xi''an, 710049, China;3. Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265503, China;4. Overseas Expertise Introduction Center for Micro/Nano Manufacturing and Nano Measurement Technologies Discipline Innovation, and Xi''an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, China;5. School of Chemical Engineering, University of Arkansas, AR, 72701, USA |
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| Abstract: | This work is an initial attempt to model the fundamental processes that occur when SiC is implanted at elevated substrate temperatures Ti (200°–800°) with high doses of N+ and Al+ ions to synthesise buried layers of (SiC)1 − x(AlN)x. The theoretical treatment has involved ballistic calculation of the implant and damage profiles by means of computer codes (TRIRS and DYTRIRS) specifically developed for modelling complex, multi-elemental targets. The influence of the mechanical stress induced the by implanted ions has been taken into account by adding a special term to the differential equations describing the evolution of the implant and damage distributions. Results from the simulations have been correlated with data obtained by Rutherford backscattering spectrometry/ion channelling (RBS/C). The theoretical approach described has enabled one to determine the interaction energies of the interstitials with the internal stress field as well as the role of stress on the defect distribution. |
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