Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon |
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| Affiliation: | 1. School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China;2. Key Laboratory of Hydraulic Machinery Transients (Wuhan University), Ministry of Education, Wuhan 430072, China;3. School of Mechanical Engineering, Wuhan Polytechnic University, Wuhan 430023, China;1. School of Mechatronic Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;2. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;1. Center of Electrochemical Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA;2. Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA;3. Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, 43210, USA;4. Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland, WA, 99352, USA;5. Questek Innovations LLC, Evanston Il, 60201, USA;6. Citrine Informatics, Redwood City, CA, 94063, USA |
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| Abstract: | The depth distribution of SiC nanocrystals formed during high-dose implantation of carbon ions into silicon at conditions suitable for the ion beam synthesis of buried SiC layers in silicon is studied in this paper. For implantation temperatures of 400–600°C and dose rates of 1012 − 1013 C+/cm2s, SiC precipitates in crystalline silicon are observed to be of approximately equal size, independent of the depth position beneath the surface. Ballistic destruction of small precipitates and difficulties in precipitate growth are thought to be responsible for the observed narrow size distribution. The destruction of precipitates may lead to the simultaneous release of a superthreshold concentration of carbon atoms resulting in a carbon-induced amorphization of the silicon host lattice. The local reduction of the number density of SiC nanocrystals involved with this amorphization can be used to tailor discontinuous depth distributions of oriented SiC precipitates providing ideal starting conditions for the synthesis of well-defined single-crystalline SiC layers in silicon. |
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