Glancing incidence diffuse X-ray scattering studies of implantation damage in Si |
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| Affiliation: | 1. Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204, USA;2. Department of Energy Systems Engineering, Faculty of Engineering and Natural Sciences, Yıldırım Beyazıt University, Ankara, Turkey;3. Department of Electrical-Electronic Engineering, Faculty of Engineering, University of Karabuk, Karabuk, Turkey;4. Department of Physics, College of Science, University of Kirkuk, Kirkuk 36001, Iraq;1. Boone Pickens School of Geology, Oklahoma State University, Stillwater, OK, USA;4. College of Agriculture and Natural Resources, University of Delaware, Newark, DE, USA;5. Department of Biology, Georgia Southern University, Statesboro, GA, USA;1. Photonics and Nanotechnology Section, Atomic and Molecular Physics Division, Bhabha Atomic Research Centre Facility, Visakhapatnam 530012, India;2. Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, Odisha, India;3. UGC-DAE Consortium for Scientific Research, Indore, Indore 452001, India;4. Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India |
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| Abstract: | Diffuse X-ray scattering (DXS) at glancing incidence is a potentially powerful means for elucidating damage structures in irradiated solids. Fundamental to the analysis of diffuse X-ray scattering data is a knowledge of the atomic displacement field around defects, which for implantation damage in crystals like Si has been difficult to obtain using analytical solutions of elastic continuum theory. We present a method for predicting the diffuse scattering pattern by calculating the displacement field around a defect using fully atomistic simulations and performing discrete sums for the scattering intensity. We apply the method to analyze experimental DXS results of defects produced by 4.5 keV He and 20 keV Ga irradiations of Si at temperatures of 100–300 K. The results show that the self-interstitial in ion-irradiated Si becomes mobile around 150 K, and that amorphization of silicon by light and medium-heavy projectiles occurs homogeneously through the buildup of interstitial clusters, and not within single cascade events. |
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