采用剥离技术的铝栅100位CCD模拟延迟线

本文提出一种以多晶硅为辅助层的剥离技术,运用该技术已研制成功铝栅100位CCD模拟延迟线.实验表明此项技术在长细线条、窄间距(2.5μm以下)、高集成度的金属化工艺中容易获得高的成品率.填在转移电极间隙的多晶硅层可以发挥度好的钝化作用.对于三相电极结构中互连

An Aluminum Gate 100 - Element CCD Analog Delay Line Fabricated by Use of Lift-off Technic

An aluminum gate 100 - element CCD analog delay line has been fabricated using a lift - off technique employing an auxiliary poly-Si layer. Experiment testifies that this technique can readily obtain high finished productivity in the metallization of large scale integration where small conductor linewidths and small spaces (less than 2.5 μm) between conductors are reguired. The poly-Si layer between transfer electrodes serves as a excellent passivation. The design of diffusion tunnels for interconnections in the 3-phase structure has been improved.