Electroabsorption waveguide modulators at 1.3 /spl mu/m fabricated on GaAs substrates |
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| Authors: | KK Loi L Shen HH Wieder WSC Chang |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA; |
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| Abstract: | An InGaAs-InAlAs multiple-quantum-well (MQW) electroabsorption (EA) waveguide modulator fabricated on a GaAs substrate has been designed and characterized at 1.3-/spl mu/m wavelength for microwave signal transmission on an analog fibre-optic link. The modulator structure with a lattice constant 2.5% larger than that of GaAs is grown upon a 0.7-/spl mu/m-thick three-stage compositionally step-graded In/sub z/Al/sub 1-z/As relaxed buffer. The waveguide modulator exhibits a high-electrooptic slope efficiency of 0.56 V/sup -1/, a 3-dB electrical bandwidth of 20 GHz, and a large optical saturation intensity in excess of 17 mW. These high-speed optoelectronic modulators could potentially be integrated with on-chip GaAs electronic driver circuits. |
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