| LiNbO_3/p~ n diode surface acoustic wave memory correlator |
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| 作者姓名： | 张朝 水永安 印建华 |
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| 作者单位： | Institute of Acoustics，Nanjing University，Nanjing 210093，China，Institute of Acoustics，Nanjing University，Nanjing 210093，China，Institute of Acoustics，Nanjing University，Nanjing 210093，China |
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| 摘 要： | A detailed theoretical analysis of strip-coupled LiNbO3/p n diode surface acoustic wave (SAW) memory correlator in the parametric mode is presented. The influence of some important factors on correlation output is analyzed and calculated, including the amplitudes of reference, read and write signal, duration of write signal and doping density of the diode array. The conclusions can be employed for the design of improved strip-coupled SAW memorycorrelators.
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LiNbO3/p+n diode surface acoustic wave memory correlator |
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| Chao Zhang,Yongan Shui,Jianhua Yin.LiNbO_3/p~ n diode surface acoustic wave memory correlator[J].Science in China(Technological Sciences),1997,40(5):497-504. |
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| Authors: | Chao Zhang Yongan Shui Jianhua Yin |
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| Affiliation: | 1. Institute of Acoustics, Nanjing University, 210093, Nanjing, China
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| Abstract: | A detailed theoretical analysis of strip-coupled LiNbO3/p n diode surface acoustic wave (SAW) memory correlator in the parametric mode is presented. The influence of some important factors on correlation output is analyzed and calculated, including the amplitudes of reference, read and write signal, duration of write signal and doping density of the diode array. The conclusions can be employed for the design of improved strip-coupled SAW memorycorrelators. |
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| Keywords: | memory correlator diode array SAW tapped delay line minority carrier lifetime |
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