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聚酰亚胺PI/SiC纳米复合材料的制备及特性
引用本文:王铎. 聚酰亚胺PI/SiC纳米复合材料的制备及特性[J]. 合成技术及应用, 2006, 21(3): 45-48
作者姓名:王铎
作者单位:陕西理工学院化学系,陕西,汉中,723001;西安理工大学材料科学与工程,学院,陕西,西安,710061
摘    要:通过熔胶-凝胶方法合成了用于电子封装的聚酰亚胺PI/SiC复合薄膜介电材料,并通过扫描电镜、透射电镜、红外光谱对复合薄膜进行结构表征。结果表明,聚酰亚胺PI/SiC复合材料是一种共聚物,是纳米SiC粒子均匀分散在PI基体中的复合材料体系。在4284A型阻抗分析仪上测量了材料的电容,并换算出相应介电常数,最低达ε=2.0。

关 键 词:聚酰亚胺  薄膜  电子封装材料  介电性能
文章编号:1006-334X(2006)03-0045-04
收稿时间:2006-06-05
修稿时间:2006-06-05

Preparation and properties of polyimide/silicon carbide nano composites
Wang Duo. Preparation and properties of polyimide/silicon carbide nano composites[J]. Synthetic Technology and Application, 2006, 21(3): 45-48
Authors:Wang Duo
Affiliation:1. Department of Chemistry, Shanxi University of Technology, Hanzhong Shanxi 723001, China ; 2. Department of Chemistry, Xian University of Technology, Xian Shanxi 71006, China
Abstract:In this paper, the polyimide/silicon carbide (PI/SiC) nanocomposites for electronic assembly were synthesized using Sol-Gel method and characterized using scanning electron microscope (SEM), Transmission electron microscope (TEM) , Fourier transform infrared spectroscopy (FTIR). It was found that SiC nanoparticles formed chemical bonding with PI functional groups and well dispersed into PI matrix. The as-formed nanocomposites can greatly reduce the dielectric constant to 2.0.
Keywords:polyimide/SiC composite film  Sol-Gel  dielectric properties
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